InitRech 2015/2016, sujet 22
Summary
This article is talking about Graphene transistors. His autor is Frank Schiwierz from University of Technology of Ilmenau in Germany and he publish it in 2010.
As an introduction of the subject, the autor explain that the growing interest for the Graphene by the electron devices community. He also explain there are two kind of semiconductor electronics. The first one is digitals devices for which is not a priority to include new materials in its technologie because it's focusing on one sort of devices the MOSFET or metal-oxide-semiconductor FET and it is a very profitable buisness. The second one is radiofrequency devices which more open the previous one for new devices technology. For example, this technology built-in high-electron-mobility transistors (HEMTs) based on semiconductors such as GaAs and InP, silicon n-channel MOSFETs, and different types of bipolar transistor. So, the author end his introduction by saying that Graphene is more destinated to radiofrequency devices rather than digitals devices due to its high conductivity and over proprieties.
In a first section, he demonstrate that Graphene is a real opportunity for FET technology because of its thickness .It is abel to considerably reduce the short channel effects for FETs with short gates and fast carrier in the channel which are used in high-speed applications. Moreover, he makes comparaison of Graphene's thickness and over devices channel's tickness, generally based on silicon. He also explain why digitals devices need a switch-off and radiofrequency applications not.
In a second second, he try to explain Graphene properties relevant to transistors. The two important aspects of graphene are the bandgap and electric charge transport at room temperature. Grafene has a bangap of zero, it never be switched off so it is not suitable for logic applications. But he also show three possibilty to open a bandgap in graphene. First one was by constraining large-area graphene in one dimension to form graphene nanoribbons that have a bandgap, the second one was by biasing bilayer graphene and the third one was by applying strain to graphene. However, The biggest advance of the graphene is its hich carrier mobility. Its mobility is ten time and more (in some cases) higher than mobility of SiO2 (between 10 000 and 70 000 cm² V-1 s-1).
